| PART |
Description |
Maker |
| BS62LV4000 |
Asynchronous 4M(512Kx8) bits Static RAM
|
BSI
|
| BS62LV2000 |
Asynchronous 2M(256Kx8) bits Static RAM
From old datasheet system
|
BSI
|
| BS62LV2007 |
Asynchronous 2M(256Kx8) bits Static RAM
From old datasheet system
|
BSI
|
| BS616LV2025 |
Asynchronous 2M(256Kx8 or 128Kx16 Switchable) bits Static RAM
From old datasheet system
|
BSI
|
| BS62LV2006TI BS62LV2006TIG55 BS62LV2006TIG70 BS62L |
Very Low Power/Voltage CMOS SRAM 256K X 8 bit 非常低功电压CMOS SRAM56K × 8
Asynchronous 2M(256Kx8) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC.
ETC
BSI[Brilliance Semiconductor]
|
| BS616LV1615 BS616LV1615FIP70 BS616LV1615FC BS616LV |
Very Low Power/Voltage CMOS SRAM 1M X 16 bit 非常低功电压CMOS SRAM00万16
Asynchronous 16M(1Mx16) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| BS62LV2008 BS62LV2016SI BS62LV2008DC BS62LV2008DC- |
Very Low Power/Voltage CMOS SRAM 256K X 8 bit 非常低功电压CMOS SRAM56K × 8
From old datasheet system
Asynchronous 2M(256Kx8) bits Static RAM
|
Brilliance Semiconducto...
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| IDT72T51333L5BB IDT72T51353L6BBI IDT72T51333 IDT72 |
2.5V MULTI-QUEUE FLOW-CONTROL DEVICES (4 QUEUES) 36 BIT WIDE CONFIGURATION 589,824 bits, 1,179,648 bits and 2,359,296 bits
|
IDT[Integrated Device Technology]
|
| BS616LV161 BS616LV1613FC BS616LV1613FC-55 BS616LV1 |
Very Low Power/Voltage CMOS SRAM 1M X 16 bit
Asynchronous 16M(1Mx16) bits Static RAM
|
Brilliance Semiconducto...
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| EDS6416AHBH-75-E EDS6416CHBH-75-E |
64M bits SDRAM (4M words x 16 bits) 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60
64M bits SDRAM (4M words x 16 bits) 6400位的SDRAM4分字× 16位）
|
Elpida Memory, Inc.
|
| IS42S16400J-6TL |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc
|
| IS42S16400 IS42S16400A 42S16400A |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
ISSI
Integrated Silicon Solution, Inc
N.A.
|
